N The IRF630FP is a Power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Manufacturer:** STMicroelectronics (ST)
### **Specifications:**
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 200V
- **Continuous Drain Current (ID):** 9.3A
- **Pulsed Drain Current (IDM):** 37A
- **Power Dissipation (PD):** 48W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.4Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2-4V
- **Input Capacitance (Ciss):** 600pF (typ)
- **Output Capacitance (Coss):** 160pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Package:** TO-220FP (Fully Insulated)
### **Descriptions:**
- The IRF630FP is a high-voltage N-Channel MOSFET designed for power switching applications.
- It features a fully insulated TO-220FP package, providing electrical isolation between the device and the heatsink.
- Suitable for high-efficiency power conversion, motor control, and switching applications.
### **Features:**
- **High Voltage Capability:** 200V breakdown voltage.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-speed switching applications.
- **Fully Insulated Package:** Eliminates the need for an additional insulation pad.
- **Avalanche Energy Specified:** Enhances reliability in rugged environments.
This information is based on the manufacturer's datasheet and technical documentation.
