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IRF614PBF from IR,International Rectifier

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7.813ms

IRF614PBF

Manufacturer: IR

250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF614PBF IR 32000 In Stock

Description and Introduction

250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF614PBF is a Power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF614PBF is an N-channel Power MOSFET designed for high-speed switching applications. It is part of the HEXFET® Power MOSFET family, offering low on-resistance and high efficiency.  

### **Key Features:**  
- **Voltage Rating (VDSS):** 200V  
- **Current Rating (ID):** 5.5A (continuous at 25°C)  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Gate Threshold Voltage (VGS(th)):** 2-4V  
- **Power Dissipation (PD):** 40W (at 25°C)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Low Gate Charge (Qg)**  
- **TO-220AB Package**  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-efficiency power management  

### **Package Type:**  
TO-220AB (Through-hole mounting)  

This information is based solely on the manufacturer's datasheet and specifications.

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