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IRF5852TR from IR,International Rectifier

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IRF5852TR

Manufacturer: IR

20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package

Partnumber Manufacturer Quantity Availability
IRF5852TR IR 12000 In Stock

Description and Introduction

20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package The IRF5852TR is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF5852TR is a N-channel Power MOSFET designed for high-efficiency power switching applications. It is optimized for low on-state resistance (RDS(on)) and fast switching performance.  

### **Key Features:**  
- **Voltage Rating (VDS):** 150V  
- **Current Rating (ID):** 50A (continuous) at 25°C  
- **On-State Resistance (RDS(on)):** 12mΩ (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V (max)  
- **Power Dissipation (PD):** 200W (at 25°C case temperature)  
- **Fast Switching Speed:** Low gate charge (Qg) and low input/output capacitances for efficient switching.  
- **Avalanche Energy Rated:** Provides robustness in inductive switching applications.  
- **Package:** TO-263 (D2PAK), surface-mount package for high-power applications.  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and other high-current switching circuits.  

### **Additional Notes:**  
- **RoHS Compliant:** Yes  
- **Lead-Free:** Yes  

This information is strictly based on the manufacturer's datasheet and technical specifications.

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