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IRF5852 from IR,International Rectifier

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15.625ms

IRF5852

Manufacturer: IR

20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package

Partnumber Manufacturer Quantity Availability
IRF5852 IR 800 In Stock

Description and Introduction

20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package The IRF5852 is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRF5852  

### **Description:**  
The IRF5852 is a **N-Channel Power MOSFET** designed for high-efficiency power switching applications. It is optimized for low on-state resistance (RDS(on)) and fast switching performance.  

### **Key Features:**  
- **Voltage Rating (VDSS):** 200V  
- **Current Rating (ID):** 12A (continuous)  
- **On-Resistance (RDS(on)):** 0.27Ω (max at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V (max)  
- **Power Dissipation (PD):** 45W  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Low Gate Charge (Qg)**  
- **Low Thermal Resistance**  
- **TO-220 Package**  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-efficiency power management  

This information is based on the manufacturer's datasheet and specifications. For detailed electrical characteristics and performance curves, refer to the official IRF5852 datasheet.

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