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IRF5803D2TRPBF from IR,International Rectifier

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15.625ms

IRF5803D2TRPBF

Manufacturer: IR

-40V FETKY

Partnumber Manufacturer Quantity Availability
IRF5803D2TRPBF IR 30000 In Stock

Description and Introduction

-40V FETKY The IRF5803D2TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 195A @ 25°C  
- **Pulsed Drain Current (IDM):** 780A  
- **RDS(on) (Max):** 1.8mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Descriptions & Features:**  
- **Advanced Process Technology:** Optimized for low on-resistance and high current handling.  
- **Fast Switching:** Designed for high-efficiency power conversion.  
- **Low Gate Charge:** Improves switching performance.  
- **Avalanche Energy Rated:** Ensures ruggedness in high-energy applications.  
- **Logic Level Gate Drive:** Compatible with standard drive circuits.  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and synchronous rectification.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Partnumber Manufacturer Quantity Availability
IRF5803D2TRPBF IOR 3378 In Stock

Description and Introduction

-40V FETKY The IRF5803D2TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 195A  
- **Pulsed Drain Current (IDM):** 390A  
- **Power Dissipation (PD):** 330W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.8mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) to 2.5V (max)  
- **Input Capacitance (Ciss):** 8400pF  
- **Output Capacitance (Coss):** 3000pF  
- **Reverse Transfer Capacitance (Crss):** 150pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Descriptions and Features:**  
- **Technology:** Advanced Trench MOSFET technology  
- **Package:** D2PAK (TO-263)  
- **Low On-Resistance:** Optimized for high efficiency  
- **Fast Switching:** Suitable for high-frequency applications  
- **Avalanche Rated:** Robust and reliable performance  
- **Lead-Free & RoHS Compliant**  

This information is based solely on the manufacturer's datasheet.

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