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IRF530NSTRRPBF from IR,International Rectifier

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15.625ms

IRF530NSTRRPBF

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF530NSTRRPBF IR 5600 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF530NSTRRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF530NSTRRPBF  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-speed switching applications  
- Suitable for power management, motor control, and other high-efficiency applications  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 17A  
- **Pulsed Drain Current (IDM):** 68A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 88W  
- **On-Resistance (RDS(on)):** 0.11Ω (at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 700pF  
- **Output Capacitance (Coss):** 180pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 12ns  
- **Turn-Off Delay Time (td(off)):** 44ns  

### **Features:**  
- Fast switching speed  
- Low gate charge  
- Low on-resistance  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

### **Package:**  
TO-263 (D2PAK)  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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