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IRF510S from IR,International Rectifier

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IRF510S

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF510S IR 4800 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF510S is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 5.6A  
- **Pulsed Drain Current (IDM):** 22A  
- **Power Dissipation (PD):** 43W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.54Ω (at VGS = 10V, ID = 5.6A)  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 240pF  
- **Output Capacitance (Coss):** 75pF  
- **Reverse Transfer Capacitance (Crss):** 30pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Rise Time (tr):** 30ns  
- **Turn-Off Delay Time (td(off)):** 50ns  
- **Fall Time (tf):** 20ns  

### **Description:**  
- The IRF510S is an N-channel power MOSFET designed for high-speed switching applications.  
- It is optimized for low gate drive power requirements and efficient switching performance.  

### **Features:**  
- **Fast Switching Speed**  
- **Low On-Resistance**  
- **High Input Impedance**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **TO-220AB Package**  

These details are based on the manufacturer's datasheet for the IRF510S.

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