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IRF4905SPBF from IR,International Rectifier

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IRF4905SPBF

Manufacturer: IR

HEXFET Power MOSFET

Partnumber Manufacturer Quantity Availability
IRF4905SPBF IR 27 In Stock

Description and Introduction

HEXFET Power MOSFET The IRF4905SPBF is a P-channel Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDS):** -55V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -74A (at 25°C)  
- **Pulsed Drain Current (IDM):** -280A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **RDS(on) (Max):** 20mΩ (at VGS = -10V)  
- **RDS(on) (Max):** 26mΩ (at VGS = -4.5V)  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Input Capacitance (Ciss):** 3800pF  
- **Output Capacitance (Coss):** 1000pF  
- **Reverse Transfer Capacitance (Crss):** 200pF  
- **Turn-On Delay Time (td(on)):** 18ns  
- **Rise Time (tr):** 50ns  
- **Turn-Off Delay Time (td(off)):** 70ns  
- **Fall Time (tf):** 35ns  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-263 (D2PAK)  

### **Description:**
The IRF4905SPBF is a high-current P-channel MOSFET designed for power management applications. It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion.

### **Features:**
- **Advanced Process Technology:** Provides low on-resistance and high switching performance.  
- **High Current Capability:** Supports up to -74A continuous drain current.  
- **Low Gate Charge:** Enhances switching efficiency.  
- **Avalanche Energy Specified:** Ensures ruggedness in high-energy environments.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

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