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IRF420 from IR,International Rectifier

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15.625ms

IRF420

Manufacturer: IR

N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V

Partnumber Manufacturer Quantity Availability
IRF420 IR 9 In Stock

Description and Introduction

N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V The IRF420 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 4A (at 25°C)  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.5Ω (max at VGS = 10V, ID = 2A)  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Output Capacitance (Coss):** 70pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 15pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 55ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Package:**  
- **TO-220AB** (Through-hole package)  

### **Description:**  
- The IRF420 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications.  
- It is suitable for use in power supplies, motor control, and other switching circuits requiring efficient power handling.  

### **Features:**  
- **High Voltage Capability (500V)**  
- **Low On-Resistance**  
- **Fast Switching Speed**  
- **Improved dv/dt Capability**  
- **Avalanche Energy Specified**  
- **Planar Technology for Enhanced Reliability**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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