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IRF4104S from IR,International Rectifier

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IRF4104S

Manufacturer: IR

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF4104S IR 4800 In Stock

Description and Introduction

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF4104S is a Power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 100A  
- **Pulsed Drain Current (IDM):** 400A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W  
- **RDS(on) (Max):** 4.5mΩ @ VGS = 10V  
- **RDS(on) (Max):** 5.5mΩ @ VGS = 4.5V  
- **Input Capacitance (Ciss):** 3800pF  
- **Output Capacitance (Coss):** 1200pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Turn-On Delay Time (td(on)):** 13ns  
- **Rise Time (tr):** 40ns  
- **Turn-Off Delay Time (td(off)):** 50ns  
- **Fall Time (tf):** 20ns  

### **Description:**  
The IRF4104S is a high-current, low-on-resistance N-channel Power MOSFET designed for high-efficiency switching applications. It is optimized for low gate charge and fast switching performance, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- **Advanced HEXFET® Technology** for high efficiency and reliability  
- **Low On-Resistance (RDS(on))** for reduced conduction losses  
- **Fast Switching Speed** for improved performance in high-frequency applications  
- **Avalanche Energy Rated** for ruggedness in harsh conditions  
- **Fully Characterized for Dynamic dV/dt Rating**  
- **Lead-Free & RoHS Compliant**  

### **Package:**  
- **TO-263 (D2PAK)** surface-mount package  

This information is based on the manufacturer's datasheet and technical documentation.

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