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IRF4104PBF from IR,International Rectifier

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IRF4104PBF

Manufacturer: IR

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF4104PBF IR 115000 In Stock

Description and Introduction

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF4104PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 100A  
- **Pulsed Drain Current (IDM):** 400A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W  
- **On-Resistance (RDS(on)):** 4.0mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 3800pF  
- **Output Capacitance (Coss):** 1100pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions and Features:**  
- **Technology:** Advanced HEXFET® Power MOSFET  
- **Package:** TO-220AB (Through-Hole)  
- **Applications:** High-efficiency power switching in DC-DC converters, motor control, and power supplies  
- **Features:**  
  - Low on-resistance for reduced conduction losses  
  - Fast switching performance  
  - Robust and reliable design  
  - Avalanche energy specified  
  - Lead-free and RoHS compliant  

This information is based solely on the manufacturer's datasheet.

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