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IRF3808S from IR,International Rectifier

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15.625ms

IRF3808S

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3808S IR 4800 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3808S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on factual information:  

### **Manufacturer:**  
- International Rectifier (IR)  

### **Description:**  
- The IRF3808S is a **N-Channel Power MOSFET** designed for high-efficiency switching applications.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 140A (at 25°C)  
- **Pulsed Drain Current (IDM):** 560A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W (at 25°C)  
- **On-Resistance (RDS(on)):** 3.7mΩ (max at VGS = 10V)  
- **Total Gate Charge (Qg):** 150nC (typical)  
- **Input Capacitance (Ciss):** 5400pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses.  
- **Ultra-Low On-Resistance (RDS(on))** for high efficiency.  
- **Fast Switching Speed** for improved performance in power applications.  
- **Avalanche Energy Rated** for ruggedness in harsh conditions.  
- **Lead-Free & RoHS Compliant** for environmental safety.  

### **Package:**  
- **TO-263 (D2PAK)** surface-mount package.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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