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IRF3808. from IR,International Rectifier

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IRF3808.

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3808.,IRF3808 IR 609 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3808 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from the manufacturer's datasheet:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRF3808  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 140A @ 25°C  
- **Pulsed Drain Current (IDM):** 560A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W @ 25°C  
- **On-Resistance (RDS(on)):** 4.5mΩ @ VGS = 10V  
- **Total Gate Charge (Qg):** 180nC  
- **Input Capacitance (Ciss):** 5400pF  
- **Output Capacitance (Coss):** 1300pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Turn-On Delay Time (td(on)):** 18ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Rise Time (tr):** 45ns  
- **Fall Time (tf):** 30ns  

### **Package:**  
TO-220AB  

### **Features:**  
- Advanced HEXFET® MOSFET technology  
- Low on-resistance for high efficiency  
- Fast switching speed  
- High current capability  
- Improved dv/dt capability  
- 100% avalanche tested  

### **Applications:**  
- High-power DC-DC converters  
- Motor control  
- Power supplies  
- Automotive systems  
- Industrial applications  

This information is based on the manufacturer's datasheet for the IRF3808. For detailed performance curves and application notes, refer to the official IR documentation.

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