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IRF3717 from IOR,International Rectifier

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IRF3717

Manufacturer: IOR

20V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF3717 IOR 60 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF3717 is a power MOSFET manufactured by International Rectifier (now part of Infineon Technologies). Below are its key specifications, descriptions, and features based on factual data:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 8.0mΩ (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2.0V to 4.0V  
- **Input Capacitance (Ciss):** 4200pF (typical)  
- **Output Capacitance (Coss):** 1000pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 200pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF3717 is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It is commonly used in power supplies, motor control, and DC-DC converters due to its low on-resistance and high current-handling capability.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses.  
- **Low RDS(on)** for improved efficiency.  
- **Fast Switching Speed** for high-frequency applications.  
- **Avalanche Energy Rated** for ruggedness in harsh conditions.  
- **Fully Characterized for Dynamic Performance** to ensure reliable operation.  
- **Lead-Free and RoHS Compliant** for environmental safety.  

The IRF3717 is available in a TO-220AB package for easy mounting and heat dissipation.  

(Note: Always refer to the official datasheet for the most accurate and detailed specifications.)

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