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IRF3711Z from IR,International Rectifier

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31.250ms

IRF3711Z

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3711Z IR 18000 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3711Z is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details about this component:

### **Specifications:**
- **Manufacturer:** International Rectifier (IR)  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDSS):** 20V  
- **Current Rating (ID):** 62A (continuous at 25°C)  
- **RDS(on) (Max):** 5.3 mΩ at VGS = 10V  
- **Gate Threshold Voltage (VGS(th)):** 1V (min), 2V (max)  
- **Power Dissipation (PD):** 200W  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions and Features:**
- **High Current Handling:** Capable of handling up to 62A continuous drain current.  
- **Low On-Resistance:** Minimizes conduction losses for improved efficiency.  
- **Fast Switching:** Suitable for high-frequency switching applications.  
- **Avalanche Energy Rated:** Provides ruggedness in inductive load conditions.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals (as low as 4.5V).  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and other high-current switching circuits.  

This MOSFET is designed for high-performance power management applications where low conduction losses and high efficiency are critical.

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