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IRF3711STRLPBF from IR,International Rectifier

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IRF3711STRLPBF

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3711STRLPBF IR 5000 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3711STRLPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRF3711STRLPBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 84A (at 25°C)  
- **Pulsed Drain Current (IDM):** 330A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 3.3mΩ (at VGS = 10V, ID = 42A)  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.0V  
- **Input Capacitance (Ciss):** 5200pF  
- **Output Capacitance (Coss):** 1800pF  
- **Reverse Transfer Capacitance (Crss):** 900pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Mounting Type:** Surface Mount (TO-263-3, D2PAK)  

### **Description:**  
The IRF3711STRLPBF is a high-current, low-on-resistance N-Channel MOSFET designed for power management applications. It is optimized for high efficiency and fast switching performance in DC-DC converters, motor control, and other power electronics systems.  

### **Features:**  
- **Low RDS(on):** Enhances power efficiency by minimizing conduction losses.  
- **High Current Handling:** Supports up to 84A continuous drain current.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Provides robustness in inductive load switching.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  
- **Surface-Mount Package (D2PAK):** Optimized for automated assembly.  

This information is based on the manufacturer's datasheet.

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