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IRF3711S from IR,International Rectifier

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15.625ms

IRF3711S

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3711S IR 14090 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3711S is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:  

### **Manufacturer:**  
- **Infineon Technologies**  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 98A (at 25°C)  
- **Pulsed Drain Current (IDM):** 390A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 2.3mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 5100pF  
- **Output Capacitance (Coss):** 2200pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  

### **Description:**  
- The IRF3711S is a **N-channel** power MOSFET designed for high-current, low-voltage applications.  
- It features **low on-resistance** and **fast switching** performance, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.  
- The device is housed in a **TO-263 (D2PAK)** package, providing good thermal performance.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses.  
- **High current handling capability.**  
- **Optimized for high-frequency switching.**  
- **Avalanche energy rated for ruggedness.**  
- **Lead-free and RoHS compliant.**  

This information is based on Infineon's datasheet for the IRF3711S.

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