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IRF3711PBF from IR,International Rectifier

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IRF3711PBF

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3711PBF IR 67152 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3711PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on factual data:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 98A (at 25°C)  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 3.3mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 140nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Description:**  
The IRF3711PBF is an N-channel power MOSFET designed for high-current, low-voltage applications. It offers low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Fast switching speed  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  

This information is sourced from the manufacturer's datasheet.

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