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IRF3710S from IR,International Rectifier

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7.813ms

IRF3710S

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3710S IR 800 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3710S is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRF3710S  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 57A (at 25°C)  
- **Pulsed Drain Current (IDM):** 230A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 23mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 146nC (typical)  
- **Input Capacitance (Ciss):** 5400pF (typical)  
- **Output Capacitance (Coss):** 1200pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Turn-On Delay Time (td(on)):** 18ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  

### **Package:**  
TO-263 (D2PAK)  

### **Features:**  
- Advanced HEXFET® technology for high efficiency  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- High current handling capability  
- Improved dv/dt capability  
- Avalanche rated for ruggedness  

This information is based on the manufacturer's datasheet for the IRF3710S. For detailed performance curves and application notes, refer to the official IR documentation.

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