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IRF3709ZPBF from IR,International Rectifier

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15.625ms

IRF3709ZPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3709ZPBF IR 40 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3709ZPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
- **TO-220AB** (Through-Hole)  

### **Features:**  
- **Advanced Process Technology** for low on-resistance.  
- **Fast Switching Speed** for efficient power management.  
- **Avalanche Energy Specified** for ruggedness.  
- **Low Gate Charge** for reduced drive requirements.  
- **Fully Characterized for Linear Mode Operation** for improved performance in applications requiring high current.  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Supplies  
- Battery Management Systems  

This MOSFET is designed for high-efficiency power switching applications.

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