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IRF3709Z from IR,International Rectifier

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IRF3709Z

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3709Z IR 30 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3709Z is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Power Dissipation (PD):** 140W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 4.5mΩ (at VGS = 10V)  
  - 5.5mΩ (at VGS = 4.5V)  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V  
- **Total Gate Charge (Qg):** 60nC (at VDS = 15V, VGS = 10V)  
- **Input Capacitance (Ciss):** 3200pF  
- **Output Capacitance (Coss):** 900pF  
- **Reverse Transfer Capacitance (Crss):** 180pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Description:**  
The IRF3709Z is a high-performance N-channel Power MOSFET designed for low-voltage, high-current applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Improved dv/dt capability  
- Avalanche ruggedness  
- Lead-free and RoHS compliant  

This information is based on the manufacturer's datasheet and technical documentation.

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