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IRF3709STRLPBF from IR,International Rectifier

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IRF3709STRLPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3709STRLPBF IR 600 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3709STRLPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on factual data from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF3709STRLPBF  

### **Description:**  
The IRF3709STRLPBF is an N-channel power MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and other power management applications.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 62A  
- **Pulsed Drain Current (IDM):** 250A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 8.0mΩ (at VGS = 10V)  
- **Total Gate Charge (Qg):** 95nC  
- **Input Capacitance (Ciss):** 2900pF  
- **Output Capacitance (Coss):** 700pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
- **Package Type:** D2PAK (TO-263)  
- **Mounting Type:** Surface Mount  
- **Lead-Free & RoHS Compliant:** Yes  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- Fast switching speed for improved efficiency  
- High current handling capability  
- Avalanche energy rated for ruggedness  
- Optimized for synchronous rectification in DC-DC converters  

This information is based solely on the manufacturer's datasheet and technical specifications.

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