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IRF3709PBF from IR,International Rectifier

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IRF3709PBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3709PBF IR 48 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3709PBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF3709PBF  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-efficiency power switching applications  
- Suitable for automotive, industrial, and consumer electronics  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5 mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 140W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- High current handling capability  
- Avalanche energy specified for ruggedness  
- Lead-free and RoHS compliant  

### **Package:**  
TO-220AB (Through-Hole)  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power management  
- Battery protection circuits  

This information is based on the manufacturer's datasheet and technical documentation.

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