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IRF3709L from IR,International Rectifier

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IRF3709L

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-262 package

Partnumber Manufacturer Quantity Availability
IRF3709L IR 1000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-262 package The IRF3709L is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRF3709L  

### **Description:**  
The IRF3709L is an N-channel power MOSFET designed for high-efficiency power switching applications.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 60nC (typical)  
- **Power Dissipation (PD):** 200W (at 25°C)  

### **Features:**  
- Advanced HEXFET® technology for low conduction losses  
- Low gate charge for fast switching  
- High current capability  
- Low thermal resistance  
- Avalanche energy rated  
- Lead-free and RoHS compliant  

### **Package:**  
TO-220AB (Through-hole package)  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power management  
- Switching regulators  

This information is based on the manufacturer's datasheet and technical documentation.

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