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IRF3709 from IR,International Rectifier

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IRF3709

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3709 IR 170 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3709 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:** Infineon Technologies  

### **IRF3709 Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 9.3mΩ (max) at VGS = 10V  
- **Gate Charge (Qg):** 110nC (typical)  
- **Input Capacitance (Ciss):** 3800pF (typical)  
- **Output Capacitance (Coss):** 1000pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Turn-On Delay Time (td(on)):** 13ns (typical)  
- **Turn-Off Delay Time (td(off)):** 45ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF3709 is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for DC-DC converters, motor control, and power management systems.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- Fast switching performance  
- High current capability  
- Robust and reliable construction  
- Avalanche energy rated  
- Lead-free and RoHS compliant  

This information is based on the manufacturer's datasheet and technical documentation.

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