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IRF3707ZS from IR,International Rectifier

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IRF3707ZS

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3707ZS IR 4800 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3707ZS is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF3707ZS  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-efficiency switching applications  

### **Key Features:**  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 9.3mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-263 (D2PAK)  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-current load switching  

### **Additional Notes:**  
- Low gate charge for fast switching  
- Avalanche energy specified for ruggedness  
- Lead-free and RoHS compliant  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation from Infineon Technologies.

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