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IRF3707ZPBF from IR,International Rectifier

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15.625ms

IRF3707ZPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3707ZPBF IR 35920 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3707ZPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 62A @ 25°C  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 9.3mΩ @ VGS = 10V  
- **Power Dissipation (PD):** 140W @ 25°C  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions:**  
- **Type:** N-Channel HEXFET Power MOSFET  
- **Technology:** Advanced Process Technology  
- **Applications:** High-efficiency power switching in DC-DC converters, motor control, and other power management systems.  

### **Features:**  
- **Low On-Resistance:** Enhances efficiency in power applications.  
- **Fast Switching:** Optimized for high-frequency operation.  
- **Avalanche Energy Specified:** Ensures ruggedness in harsh conditions.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This MOSFET is designed for high-current, high-efficiency switching applications.

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