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IRF3707Z from IR,International Rectifier

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IRF3707Z

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3707Z IR 3 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3707Z is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 62A  
- **Pulsed Drain Current (IDM):** 250A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 9.3mΩ (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Total Gate Charge (Qg):** 100nC (typ)  
- **Input Capacitance (Ciss):** 5100pF (typ)  
- **Output Capacitance (Coss):** 1100pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
- TO-220AB (Through-Hole)  

### **Description:**  
The IRF3707Z is a N-channel Power MOSFET designed for high-efficiency switching applications. It features low on-resistance, fast switching speeds, and robust thermal performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Advanced Process Technology:** Optimized for low RDS(on) and high current handling.  
- **Fast Switching:** Enhances efficiency in high-frequency applications.  
- **Avalanche Rated:** Ensures reliability under inductive load conditions.  
- **Improved dv/dt Capability:** Reduces susceptibility to voltage transients.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based strictly on the manufacturer's datasheet and technical documentation.

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