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IRF3707S from IR,International Rectifier

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IRF3707S

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3707S IR 4800 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3707S is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from the manufacturer's datasheet:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF3707S is a N-channel HEXFET Power MOSFET designed for high-efficiency switching applications. It is optimized for low on-state resistance (RDS(on)) and fast switching performance.  

### **Key Features:**  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **On-Resistance (RDS(on)):**  
  - 9.3mΩ (max) at VGS = 10V  
  - 11mΩ (max) at VGS = 4.5V  
- **Gate-Source Voltage (VGS):** ±20V (max)  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Avalanche Energy (EAS):** 320mJ (rated)  
- **Fast Switching Speed**  
- **Low Gate Charge (Qg):** 60nC (typical)  
- **Low Thermal Resistance (RθJC):** 0.75°C/W  
- **TO-263 (D2PAK) Package**  
- **100% Avalanche Tested**  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Management  
- High-Efficiency Switching Circuits  

This information is sourced directly from Infineon's official datasheet for the IRF3707S.

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