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IRF3707 from IR,International Rectifier

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IRF3707

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3707 IR 15000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3707 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on the manufacturer's data:

### **Manufacturer:**  
International Rectifier (IR)  

### **Description:**  
The IRF3707 is an N-channel power MOSFET designed for high-efficiency switching applications. It is optimized for low on-resistance and fast switching performance.  

### **Key Features:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **On-Resistance (RDS(on)):**  
  - 8.0 mΩ (max) at VGS = 10V  
  - 10 mΩ (max) at VGS = 4.5V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Total Gate Charge (Qg):** 110nC (typical)  
- **Input Capacitance (Ciss):** 4500pF (typical)  
- **Output Capacitance (Coss):** 1400pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 350pF (typical)  
- **Avalanche Energy (EAS):** 270mJ (tested)  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
- TO-220AB (Through-Hole)  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-current switching circuits  

This information is sourced from the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official IRF3707 datasheet.

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