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IRF3706 from IR,International Rectifier

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IRF3706

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3706 ,IRF3706 IR 400 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3706 is a power MOSFET manufactured by International Rectifier (IR). Below are the specifications, descriptions, and features as provided in Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** International Rectifier (IR)  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 6.0mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2.0V (min) - 4.0V (max)  
- **Input Capacitance (Ciss):** 2700pF (typ)  
- **Output Capacitance (Coss):** 1100pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF3706 is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and high current handling capability, making it suitable for switching applications in power supplies, motor control, and DC-DC converters.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **High Current Capability:** Supports high-power applications.  
- **Fast Switching:** Optimized for efficient switching performance.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load applications.  
- **TO-220 Package:** Provides reliable thermal performance.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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