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IRF3704ZS from IR,International Rectifier

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IRF3704ZS

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3704ZS IR 4800 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3704ZS is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 140A  
- **Pulsed Drain Current (IDM):** 560A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W  
- **RDS(on) (Max) at VGS = 10V:** 2.3mΩ  
- **RDS(on) (Max) at VGS = 4.5V:** 3.0mΩ  
- **Input Capacitance (Ciss):** 4200pF  
- **Output Capacitance (Coss):** 1100pF  
- **Reverse Transfer Capacitance (Crss):** 500pF  
- **Turn-On Delay Time (td(on)):** 12ns  
- **Turn-Off Delay Time (td(off)):** 44ns  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF3704ZS is a high-performance N-channel MOSFET designed for low-voltage, high-current applications. It features ultra-low on-resistance (RDS(on)) and fast switching speeds, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses  
- **Low RDS(on)** for improved efficiency  
- **High Current Handling Capability** (140A continuous)  
- **Fast Switching Performance**  
- **Avalanche Energy Rated**  
- **Lead-Free & RoHS Compliant**  

### **Package:**  
- **TO-263 (D2PAK)** surface-mount package  

This information is based on the manufacturer's datasheet and technical documentation.

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