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IRF3704STRRPBF from IR,International Rectifier

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15.625ms

IRF3704STRRPBF

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3704STRRPBF IR 5100 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3704STRRPBF is a Power MOSFET manufactured by Infineon Technologies.  

### **Manufacturer Specifications:**  
- **Drain-Source Voltage (VDSS):** 20V  
- **Continuous Drain Current (ID):** 140A (at 25°C)  
- **Pulsed Drain Current (IDM):** 560A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.8mΩ (max) at VGS = 10V, ID = 70A  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.0V  
- **Total Gate Charge (Qg):** 120nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Descriptions and Features:**  
- **Technology:** Advanced HEXFET® Power MOSFET  
- **Application:** Designed for high-efficiency switching in power supplies, motor control, and DC-DC converters.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances ruggedness in demanding conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is sourced from Infineon's official datasheet for the IRF3704STRRPBF.

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