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IRF3704S from IR,International Rectifier

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IRF3704S

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3704S IR 15000 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3704S is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 140A (at 25°C)  
- **Pulsed Drain Current (IDM):** 560A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.6mΩ (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Total Gate Charge (Qg):** 120nC (typical at VDS = 20V, VGS = 10V)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Package:**  
- **TO-263 (D2PAK)**  

### **Descriptions and Features:**  
- **Advanced Process Technology:** Optimized for low on-resistance and high current handling.  
- **Fast Switching:** Low gate charge and low RDS(on) for efficient performance.  
- **Avalanche Energy Specified:** Enhances ruggedness in high-energy applications.  
- **Fully Characterized for Linear Mode Operation:** Suitable for DC-DC converters, motor control, and power management.  
- **Lead-Free and RoHS Compliant:** Meets environmental standards.  

These details are based on the manufacturer's datasheet. For exact application-specific considerations, refer to the official documentation.

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