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IRF3703 from IR,International Rectifier

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IRF3703

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3703 IR 12000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3703 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 140A (at 25°C)  
- **Pulsed Drain Current (IDM):** 560A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.8mΩ (at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 5400pF  
- **Output Capacitance (Coss):** 1800pF  
- **Reverse Transfer Capacitance (Crss):** 450pF  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions:**  
The IRF3703 is a high-current, low on-resistance N-channel MOSFET designed for power management applications. It is optimized for high-efficiency switching in power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Robust and reliable construction  
- Suitable for high-power applications  

This information is based solely on the manufacturer's datasheet and specifications.

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