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IRF3415PBF from IR,International Rectifier

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IRF3415PBF

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3415PBF IR 12000 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3415PBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 150V  
- **Continuous Drain Current (ID):** 43A (at 25°C)  
- **Pulsed Drain Current (IDM):** 170A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.042Ω (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 2100pF (typ)  
- **Output Capacitance (Coss):** 500pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typ)  
- **Switching Speed:** Fast switching due to low gate charge  

### **Description:**  
The IRF3415PBF is an N-channel MOSFET designed for high-power applications, offering low on-resistance and high current capability. It is suitable for switching and amplification in power supplies, motor control, and other high-efficiency circuits.  

### **Features:**  
- **Advanced Process Technology:** Ensures low RDS(on) and high efficiency.  
- **Fast Switching:** Optimized for high-speed performance.  
- **High Current Handling:** Capable of handling up to 43A continuous current.  
- **Robust Design:** Avalanche energy specified for ruggedness.  
- **TO-220 Package:** Industry-standard package for easy mounting and heat dissipation.  

This information is sourced from the manufacturer's datasheet and technical documentation.

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