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IRF3415L from IR,International Rectifier

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IRF3415L

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a TO-262 package

Partnumber Manufacturer Quantity Availability
IRF3415L IR 48 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a TO-262 package The IRF3415L is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Description:**  
The IRF3415L is an N-channel HEXFET Power MOSFET designed for high-efficiency switching applications. It is optimized for low on-resistance and fast switching performance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 150V  
- **Continuous Drain Current (ID):** 43A  
- **Pulsed Drain Current (IDM):** 170A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W  
- **On-Resistance (RDS(on)):** 0.042Ω (max) @ VGS = 10V  
- **Total Gate Charge (Qg):** 110nC (typical)  
- **Input Capacitance (Ciss):** 3200pF  
- **Output Capacitance (Coss):** 500pF  
- **Reverse Transfer Capacitance (Crss):** 120pF  
- **Turn-On Delay Time (td(on)):** 18ns  
- **Turn-Off Delay Time (td(off)):** 70ns  

### **Features:**  
- Advanced HEXFET technology for high efficiency  
- Low gate charge for fast switching  
- Low on-resistance for reduced conduction losses  
- Avalanche energy specified for ruggedness  
- 100% tested for RDS(on)  
- Lead-free and RoHS compliant  

### **Package:**  
TO-220AB (Through-Hole)  

This information is based solely on the manufacturer's datasheet and technical documentation.

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