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IRF3415 from IR,International Rectifier

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IRF3415

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3415 IR 5000 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3415 is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Description:**  
The IRF3415 is an N-channel Power MOSFET designed for high-speed switching applications. It is optimized for low on-resistance and high current handling capability.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 150V  
- **Continuous Drain Current (ID):** 43A (at 25°C)  
- **Pulsed Drain Current (IDM):** 170A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.042Ω (max at VGS = 10V)  
- **Input Capacitance (Ciss):** 2200pF (typical)  
- **Output Capacitance (Coss):** 500pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typical)  
- **Turn-On Delay Time (td(on)):** 12ns (typical)  
- **Turn-Off Delay Time (td(off)):** 44ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- **Advanced HEXFET® Technology** for high efficiency  
- **Low Gate Charge** for fast switching  
- **Avalanche Energy Specified** for ruggedness  
- **Fully Characterized for Linear Mode Operation**  
- **Lead-Free & RoHS Compliant**  

### **Package:**  
- **TO-220AB** (Through-Hole)  

This information is based on the manufacturer's datasheet and technical documentation.

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