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IRF3315S from IR,International Rectifier

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IRF3315S

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3315S IR 15000 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3315S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 150V  
- **Continuous Drain Current (ID):** 42A (at 25°C)  
- **Pulsed Drain Current (IDM):** 168A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.045Ω (max at VGS = 10V)  
- **Input Capacitance (Ciss):** 2700pF (typical)  
- **Output Capacitance (Coss):** 600pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typical)  
- **Turn-On Delay Time (td(on)):** 20ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
- The IRF3315S is an N-channel power MOSFET designed for high-efficiency switching applications.  
- It is optimized for low on-resistance and fast switching performance.  

### **Features:**  
- **Advanced HEXFET® Technology** for high efficiency and reliability.  
- **Low On-Resistance (RDS(on))** for reduced conduction losses.  
- **Fast Switching Speed** for improved performance in high-frequency applications.  
- **Avalanche Energy Specified** for ruggedness in inductive load applications.  
- **Fully Characterized for Dynamic dV/dt** for enhanced robustness.  
- **Lead-Free & RoHS Compliant** for environmental safety.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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