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IRF3315PBF from IR,International Rectifier

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IRF3315PBF

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3315PBF IR 900 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3315PBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 150V  
- **Continuous Drain Current (ID):** 42A (at 25°C)  
- **Pulsed Drain Current (IDM):** 168A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 230W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.045Ω (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 2700pF (typical)  
- **Output Capacitance (Coss):** 700pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Operating Junction Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRF3315PBF is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power conversion.  

### **Features:**  
- **Advanced Process Technology:** Optimized for low RDS(on) and high current handling.  
- **Fast Switching:** Minimizes switching losses in high-frequency applications.  
- **Avalanche Energy Specified:** Ensures robustness in inductive load conditions.  
- **Fully Characterized for Dynamic Performance:** Suitable for demanding power applications.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

### **Package:**  
TO-220AB (Through-Hole Mounting)  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- Inverters  
- High-current switching circuits  

This information is based solely on the manufacturer's datasheet and specifications.

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