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IRF322 from IR,International Rectifier

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IRF322

Manufacturer: IR

N-Channel Power MOSFETs/ 3.0 A/ 350-400 V

Partnumber Manufacturer Quantity Availability
IRF322 IR 5 In Stock

Description and Introduction

N-Channel Power MOSFETs/ 3.0 A/ 350-400 V The IRF322 is a power MOSFET manufactured by International Rectifier (now part of Infineon Technologies). Below are its key IR specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** 400V  
- **Continuous Drain Current (ID):** 3.7A (at 25°C)  
- **Pulsed Drain Current (IDM):** 15A  
- **Power Dissipation (PD):** 75W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.8Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Output Capacitance (Coss):** 50pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 10pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**
The IRF322 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is commonly used in power supplies, motor control, and other switching circuits requiring efficient power handling.

### **Features:**
- **High Voltage Capability:** Supports up to 400V drain-source voltage.  
- **Fast Switching:** Optimized for high-speed performance.  
- **Low On-Resistance:** Reduces conduction losses.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load applications.  
- **TO-220 Package:** Provides efficient thermal dissipation.  

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to the official IRF322 datasheet.

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