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IRF3205ZSPBF from IR,International Rectifier

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15.625ms

IRF3205ZSPBF

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package

Partnumber Manufacturer Quantity Availability
IRF3205ZSPBF IR 575 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package The IRF3205ZSPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 110A (at 25°C)  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **RDS(on) (Max):** 8.0mΩ (at VGS = 10V, ID = 55A)  
- **RDS(on) (Max):** 6.5mΩ (at VGS = 10V, ID = 110A)  
- **Operating Junction Temperature Range (TJ):** -55°C to +175°C  
- **Package:** TO-263 (D2PAK)  

### **Descriptions:**
- The IRF3205ZSPBF is an N-channel MOSFET designed for high-current, low-voltage applications.  
- It is optimized for high efficiency in switching applications such as power supplies, motor control, and DC-DC converters.  
- The device features low on-resistance and fast switching characteristics.  

### **Features:**
- **Advanced Process Technology:** Provides low RDS(on) for reduced conduction losses.  
- **High Current Capability:** Supports up to 110A continuous drain current.  
- **Fast Switching Speed:** Enhances performance in high-frequency applications.  
- **Avalanche Energy Specified:** Ensures robustness in inductive load switching.  
- **Lead-Free & RoHS Compliant:** Meets environmental regulations.  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

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