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IRF3205Z from IR,International Rectifier

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IRF3205Z

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package

Partnumber Manufacturer Quantity Availability
IRF3205Z IR 8550 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package The IRF3205Z is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 110A (at 25°C)  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 8.0mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 146nC (typical)  
- **Input Capacitance (Ciss):** 3150pF  
- **Output Capacitance (Coss):** 420pF  
- **Reverse Transfer Capacitance (Crss):** 110pF  
- **Avalanche Energy (EAS):** 1.1J  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF3205Z is a N-channel MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management, motor control, and DC-DC converters.  

### **Features:**  
- Advanced HEXFET® technology for high efficiency  
- Low RDS(on) for reduced conduction losses  
- Fast switching performance  
- High current handling capability  
- Robust and reliable construction  
- Lead-free and RoHS compliant  

This information is based on the manufacturer's datasheet and technical documentation.

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