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IRF3007 from IR,International Rectifier

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IRF3007

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3007 IR 51000 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3007 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Description:**  
The IRF3007 is an N-channel power MOSFET designed for high-speed switching applications. It is optimized for low on-resistance and high current handling capabilities.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.009Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 3000pF (typical)  
- **Total Gate Charge (Qg):** 130nC (typical)  
- **Avalanche Energy (EAS):** 1.1J  

### **Features:**  
- Advanced HEXFET® technology for high efficiency  
- Low gate charge for fast switching  
- Low on-resistance for reduced conduction losses  
- High current capability  
- Rugged and reliable design  
- 100% avalanche tested  

### **Package:**  
TO-220AB (Through-hole package)  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-frequency inverters  

This information is based solely on the manufacturer's datasheet and technical documentation.

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