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IRF3000PBF from IR,International Rectifier

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IRF3000PBF

Manufacturer: IR

300V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF3000PBF IR 7842 In Stock

Description and Introduction

300V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF3000PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 200V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.07Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 2000pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF3000PBF is an N-channel power MOSFET designed for high-speed switching applications. It features low on-resistance and high current handling capability, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- **Advanced Process Technology:** Optimized for low conduction losses.  
- **Fast Switching:** Enhances efficiency in high-frequency applications.  
- **Avalanche Energy Specified:** Ensures ruggedness under inductive loads.  
- **Low Gate Charge:** Reduces switching losses.  
- **TO-247 Package:** Provides efficient thermal performance.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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