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IRF2907Z from IR,International Rectifier

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15.625ms

IRF2907Z

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2907Z ,IRF2907Z IR 750 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2907Z is a power MOSFET manufactured by International Rectifier (IR). Below are the specifications, descriptions, and features based on the available knowledge base:

### **Specifications:**  
- **Manufacturer:** International Rectifier (IR)  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 209A @ 25°C  
- **Pulsed Drain Current (IDM):** 660A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 460W @ 25°C  
- **On-Resistance (RDS(on)):** 4.5mΩ @ VGS = 10V  
- **Gate Charge (Qg):** 210nC  
- **Input Capacitance (Ciss):** 8400pF  
- **Output Capacitance (Coss):** 2200pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-262 (D2PAK)  

### **Descriptions:**  
The IRF2907Z is a high-current, low-on-resistance N-channel power MOSFET designed for high-efficiency power switching applications. It is optimized for low gate drive requirements and fast switching performance, making it suitable for automotive, industrial, and power supply applications.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- High current handling capability  
- Fast switching speed  
- Improved dv/dt capability  
- Robust and reliable performance in high-power applications  
- Lead-free and RoHS compliant  

This information is based solely on the technical specifications provided by the manufacturer.

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