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IRF2903ZPBF from IR,International Rectifier

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IRF2903ZPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2903ZPBF IR 213 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2903ZPBF is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRF2903ZPBF  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 90A (at 25°C)  
- **Pulsed Drain Current (IDM):** 360A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 4500pF (typical)  
- **Output Capacitance (Coss):** 1200pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  

### **Package:**  
TO-220AB (Through-Hole)  

### **Features:**  
- Low on-resistance for high efficiency  
- Fast switching performance  
- High current handling capability  
- Avalanche energy specified  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power management  
- Automotive systems  
- Switching regulators  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official IR documentation.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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