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IRF2903Z from IR,International Rectifier

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IRF2903Z

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2903Z IR 31 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2903Z is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 120A (at 25°C)  
- **Pulsed Drain Current (IDM):** 480A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W (at 25°C)  
- **On-Resistance (RDS(on)):** 2.7mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V  
- **Total Gate Charge (Qg):** 170nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF2903Z is a high-current, low-on-resistance N-channel Power MOSFET designed for high-efficiency switching applications. It is optimized for low-voltage, high-current applications such as power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  
- TO-220AB package for easy mounting  

This information is based strictly on manufacturer specifications.

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