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IRF2807ZS from IR,International Rectifier

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IRF2807ZS

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package

Partnumber Manufacturer Quantity Availability
IRF2807ZS IR 4800 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package The IRF2807ZS is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 82A (at 25°C)  
- **Pulsed Drain Current (IDM):** 330A  
- **Power Dissipation (PD):** 330W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.009Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 170nC (typical)  
- **Input Capacitance (Ciss):** 5400pF  
- **Output Capacitance (Coss):** 1600pF  
- **Reverse Transfer Capacitance (Crss):** 500pF  
- **Avalanche Energy (EAS):** 1.4J  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
- **TO-263 (D2PAK)**  

### **Description:**  
The IRF2807ZS is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other power electronics applications.  

### **Features:**  
- Low on-resistance (RDS(on))  
- High current handling capability  
- Fast switching speed  
- Improved dv/dt capability  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

These details are based on the manufacturer's datasheet and specifications.

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