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IRF2807Z from DKD

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IRF2807Z

Manufacturer: DKD

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2807Z DKD 6824 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2807Z is a power MOSFET manufactured by DKD. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 82A (at 25°C)  
- **Pulsed Drain Current (IDM):** 330A  
- **Power Dissipation (PD):** 230W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 9.3mΩ (at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 5200pF  
- **Output Capacitance (Coss):** 1800pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-263 (D2PAK)  

### **Descriptions:**  
- The IRF2807Z is an N-channel power MOSFET designed for high-current, high-efficiency switching applications.  
- It is optimized for low on-resistance and fast switching performance.  
- Suitable for power management in DC-DC converters, motor control, and other power electronics applications.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- High current handling capability.  
- Fast switching speed.  
- Robust and reliable performance in high-power applications.  
- Lead-free and RoHS compliant.  

This information is based on the manufacturer's datasheet and technical documentation.

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